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DMG3N60SJ3 Images
- Manufacturer: Diodes Inc. (Diodes)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-251
- Description: MOSFET N-CH 650V 2.8A TO251
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DMG3N60SJ3 Specifications:
- MfrPart.: DMG3N60SJ3
- Mfr: Diodes Incorporated
- Description: MOSFET N-CH 650V 2.8A TO251
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: Automotive, AEC-Q101
- PartStatus: Active
- FETType: N-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 650 V
- Current-ContinuousDrain(Id)@25°C: 2.8A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 10V
- RdsOn(Max)@IdVgs: 3.5Ohm @ 1.5A, 10V
- Vgs(th)(Max)@Id: 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 12.6 nC @ 10 V
- Vgs(Max): ±30V
- InputCapacitance(Ciss)(Max)@Vds: 354 pF @ 25 V
- FETFeature: -
- PowerDissipation(Max): 41W (Tc)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-251
- DMG3N60SJ3 Diodes Inc. (Diodes), MOSFET N-CH 650V 2.8A TO251, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
DMG3N60SJ3, Diodes authentic parts in stock from Diodes Inc. (Diodes) authorized distributors, order today, can ship immediately.
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